cas 2222384-16-7|| where to buy (4-methoxy-3,5-dimethylphenyl)dimethylsulfonium bis((perfluorobutyl)sulfonyl)amide

Product Name:(4-methoxy-3,5-dimethylphenyl)dimethylsulfonium bis((perfluorobutyl)sulfonyl)amide

IUPAC Name:(4-methoxy-3,5-dimethylphenyl)dimethylsulfanium; 1,1,1,2,2,3,3,4,4-nonafluoro-4-{[(1,1,2,2,3,3,4,4,4-nonafluorobutanesulfonyl)azanidyl]sulfonyl}butane

: CAS：2222384-16-7; Molecular Formula：C19H17F18NO5S3; Purity：95%+

: Catalog Number：CM1043806; Molecular Weight：777.5

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: CAS NO:2222384-16-7; Molecular Formula:C19H17F18NO5S3; Melting Point:-; Smiles Code:CC1=CC(=CC(=C1OC)C)[S+](C)C.C(C(C(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(C(C(C(F)(F)F)(F)F)(F)F)(F)F)(F)F)(C(F)(F)F)(F)F; Density:

: Catalog Number:CM1043806; Molecular Weight:777.5; Boiling Point:; MDL No:; Storage:

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: Photoresist; Semiconductors could be termed as the most extensively utilized substance in the modern century. Polycrystalline wafers are used to make semiconductors. A single 300-mm silicon wafer may create hundreds of chips. Photoresist coatings and materials are an essential part of their fabrication as they are the main constituents of the photolithography process during the fabrication of the semiconductors. Photoresist is a mixed liquid that is sensitive to light. Its components include: photoinitiators (including photosensitizers, photoacid generators), photoresist resins, monomers, solvents and other additives. The photoresist can transfer the required fine pattern from the photomask (mask) to the substrate to be processed through photochemical reaction and photolithography processes such as exposure and development.

: Photo Acid Generator (PAG)

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